مبانی نظری و پیشینه پژوهشی بررسی خواص ساختاری و فتوکاتالیستی نانوذرات تیتانیای دوپ شده با کاتیون های فلزی

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فهرست محتوا

 

 

 

مروری بر منابع مطالعاتی و مبانی نظری

2-1- ویژگی­های نیمه­رساناها

2-1-1- حامل­های بار در نیمه­رساناها

2-1-2- انواع نیمه­رساناها

2-1-2-1- نیمه­رساناهای ذاتی

2-1-2-2- نیمه­رساناهای غیرذاتی

2-2- خواص یک فتوکاتالیست مناسب

2-2-1- فتوکاتالیست­های بررسی شده

2-3- تیتانیا

2-3-1- خواص فیزیکی و شیمیایی دی­اکسید تیتانیوم

2-3-2- ساختارهای دی­اکسید تیتانیوم

2-3-3- خاصیت فتوکاتالیستی تیتانیا

2-4- اصول اولیه فرآیندهای فتوکاتالیستی

2-4-1- تهییج فوتونی از طریق باندگپ

2-4-2- موقعیت­های لبه باند

2-4-3- اثرات اندازه کوانتومی

2-4-4- ترکیب مجدد جفت­های الکترون- حفره

2-4-5- نقش الکترون­ها و حفره­های تولید شده در اثر پرتوتابی در فتوکاتالیست

2-4-6- اکسیداسیون فتوکاتالیستی ترکیبات آلی

2-5- پارامترهای موثر بر افزایش خاصیت فتوکاتالیستی TiO₂ در نور مرئی

2-5-1- شکل و اندازه ذرات

2-5-2- ساختار کریستالی

2-5-3- بمباران یونی

2-5-4- تکنیک های ترکیب

2-5-5- اضافه کردن یون­های غیر فلزی

2-5-6- آلاییدن نیمه­هادی­ها با انواع یون­های فلزی

2-6- تاریخچه کاربردهای تیتانیا

2-7- کاربردهای تیتانیا

2-7-1- فوتوکاتالیز کردن

2-7-1-1- کاربردهای فتوکاتالیستی

2-7-1-1-1 تجزیه نوری آب
2-7-1-1-2 ضدعفونی
2-7-1-1-3 تصفیه هوا

2-7-1-1-4 تصفیه آب

2-8- فرآیند سل- ژل

2-8-1- اصول فرآیند سل-ژل

مراجع

 

-1  ویژگی­های نیمه­رساناها

نیمه­رساناها گروهی از مواد هستند که رسانایی الکتریکی آن­ها بین فلزات و عایق­ها قرار دارد. ویژگی مهم این مواد این است که رسانایی آن­ها با تغییر دما، تحریک نوری و میزان ناخالصی، به نحو قابل ملاحظه­ای تغییر
می­کند. ساختار الکترونی نیمه­رساناها شامل دو نوار انرژی است، نوار بالایی موسوم به نوار هدایت و نوار پایینی موسم به نوار ظرفیت است، شکاف میانی فاقد هرگونه تراز انرژی مجاز برای اشغال الکترون­هاست و نوار ممنوعه نامیده می­شود [4]. مواد نیمه­رسانا در صفر کلوین اساساً همان ساختار عایق­ها را دارند. تفاوت بین نیمه­رساناها در اندازه نوار ممنوعه E_g است که در نیمه­رساناها خیلی کوچک­تر از عایق­هاست. شکاف انرژی نسبتاً کوچک در نیمه­رساناها امکان تحریک الکترون­ها را از نوار پایینی (ظرفیت) به نوار بالایی (هدایت) با مقدار کافی از انرژی نوری یا گرمایی فراهم می­سازد. مثلاً در دمای معمولی یک نیمه­رسانا با شکاف نوار eV1 دارای تعداد قابل توجهی الکترون است که با تحریک گرمایی از طریق شکاف انرژی به نوار هدایت رفته­اند. در حالی­که یک عایق باeV 10=E_g  دارای تعداد ناچیزی از این­گونه برانگیختگی­ها خواهد بود. بنابراین اختلاف مهم بین مواد
نیمه­رسانا و عایق این است که الکترون­های موجود برای هدایت جریان را می­توان به­میزان زیادی به وسیله انرژی گرمایی یا نوری در نیمه­رساناها افزایش داد [5].

2-1-1  حامل­های بار در نیمه­رساناها

با تابش نور به یک نیمه­رسانا برخی از الکترون­های نوار ظرفیت، انرژی لازم را برای برانگیخته شدن به نوار هدایت بدست می­آورند. حاصل، ماده­ای با تعدادی الکترون در یک نوار هدایت تقریبا خالی و تعدادی حالت اشغال نشده در نوار ظرفیت تقریبا پر است. برای سهولت، از یک حالت خالی در نوار ظرفیت به نوار هدایت به وجود آیند، آن­ها را زوج الکترون- حفره می­نامند. در مطالعه نیمه­رساناها، از این الکترون­ها و حفره­ها به­عنوان حامل­های بار یاد می­شود [6].

2-1-2  انواع نیمه­رساناها

باتوجه به مکان تراز فرمی و میزان حامل های بار آزاد، این دسته از مواد را می­توان به دو گروه زیر تقسیم کرد:

نیمه­رساناهای ذاتی

نیمه­رساناهای غیر ذاتی

1 Band gap

¹ Instrinsic semiconductor

² Extrinsic semiconductor

 

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